Hot Electron Degradation Improvement through Horizontal Step Doping in SOI MOSFETs

  • Priyanka Parmar R.G.P.V, Bhopal
  • Anshul Jain R.G.P.V, Bhopal

Abstract

MOSFET dimensions are continued to be scaled down due to the demand of low power and high packing density As the physical dimensions of the device are reduced, the short channel effects (SCEs) are increased.To reduce these SCEs, supply voltage and doping density are also considered necessary to be scaled down.To improve performance of the MOSFETs, doping profile of channel is changed. In this paper, we present comparison of uniform doping (UD), horizontal high source side doping (HHSS) & horizontal high drain side doping (HHDS) and draw the conduction band characteristics for uniform doping (UD), horizontal high source side doping (HHSS) & horizontal high drain side doping (HHDS) our results show that the horizontal high source side doping exhibit excellent properties for  hot electron degradation improvement and better reliability. All the device simulations are performed using SILVACO Atlas device simulator.

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Author Biographies

Priyanka Parmar, R.G.P.V, Bhopal
Electronics & Communication
Anshul Jain, R.G.P.V, Bhopal
Electronics & Communication

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Published
2015-01-31
How to Cite
PARMAR, Priyanka; JAIN, Anshul. Hot Electron Degradation Improvement through Horizontal Step Doping in SOI MOSFETs. International Journal of Research and Engineering, [S.l.], v. 2, n. 1, p. 25-27, jan. 2015. ISSN 2348-7860. Available at: <https://digital.ijre.org/index.php/int_j_res_eng/article/view/40>. Date accessed: 30 sep. 2020.

Keywords

Uniform doping (UD), Horizontal high source side doping (HHSS), Horizontal high drain side doping (HHDS), short channel effects (SCEs), ATLAS.