Hot Electron Degradation Improvement through Horizontal Step Doping in SOI MOSFETs
AbstractMOSFET dimensions are continued to be scaled down due to the demand of low power and high packing density As the physical dimensions of the device are reduced, the short channel effects (SCEs) are increased.To reduce these SCEs, supply voltage and doping density are also considered necessary to be scaled down.To improve performance of the MOSFETs, doping profile of channel is changed. In this paper, we present comparison of uniform doping (UD), horizontal high source side doping (HHSS) & horizontal high drain side doping (HHDS) and draw the conduction band characteristics for uniform doping (UD), horizontal high source side doping (HHSS) & horizontal high drain side doping (HHDS) our results show that the horizontal high source side doping exhibit excellent properties for hot electron degradation improvement and better reliability. All the device simulations are performed using SILVACO Atlas device simulator.
 Morteza Rahimian, and Ali A. Orouji, “A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement,” Current Applied Physics 13, pp 779 -784, 2013.
 Udit Monga,Tor A. Fjeldly, “Compact Subthreshold Current Modeling of Short-Channel Nanoscale Double-Gate MOSFET,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 7, pp.1533-1537, 2009.
 K.KONRAD YOUNG, “Short-Channel Effect in Fully Depleted SO1 MOSFET's,” IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL 36. NO 2.,pp 399-402,1989.
 Anurag Chaudhry,M. Jagadesh Kumar, “ Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET”, IEEE Trans. Electron Dev. 51(9),pp. 1463-1467, 2004.
 Fundamentals of Modern VLSI Devices. New York: Cambridge Univ. Press, ch. 3, pp.120–128, 1998.
 H. Elahipanah, Ali A. Orouji, “A novel step-doping fully-depleted silicon-on-insulator metal oxide semiconductor field-effect transistor for reliable deep sub-micron devices”, Jpn. J. Appl. Phys. 48 (8), pp. 114503-114508, 2009.
Woo-Hyeong Lee, Young June Park and Jong Duk Lee “Gate Recessed (GR) MOSFET with Selectively Halo-Doped Channel and Deep Graded Source/Drain for Deep Submicron CMOS” IEEE (1993)
Marcel Antonio Pavanell'.',Benjamin liiiguez', JoHo Antonio Martino' and Denis Flandre.“A Physically-Based Continuous Analytical Graded-Channel SO1 nMOSFET Model For Analog Appllcatlons” IEEE International Caracas Conference on Devices Circuits and System Aruba pp. 17-19, 2002.
 J. Werne, M. Oehme, E. Kasper, J. Schulze, Influence of modulation doping to the mobility of two-dimensional electron gases in Si/SiGe, Thin Solid Films518 (6) ,pp. 234-236, 2010.
Morteza Rahimian, Ali A. Orouji, Amirhossein Aminbeidokhti “A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement”, Current Applied Physics 13 (2013) pp.779-784 (20 December 2012)
 ATLAS. : Silvaco international 2008.
This work is licensed under a Creative Commons Attribution 4.0 International License.